A semiconductor device of an embodiment includes: a silicon carbide layer including a first silicon carbide region of n-type containing one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr) and a second silicon carbide region of p-type containing the metal element; and a metal layer electrically connected to the first silicon carbide region and the second silicon carbide region. Among the metal elements contained in the first silicon carbide region, a proportion of the metal element positioned at a carbon site is higher than a proportion of the metal element positioned at an interstitial position. Among the metal elements contained in the second silicon carbide region, a proportion of the metal element positioned at an interstitial position is higher than a proportion of the metal element positioned at a carbon site.
Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
2022-06-07
Patent
Elektronische Ressource
Englisch
IPC: | H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / B61C Lokomotiven , LOCOMOTIVES / B66B Aufzüge , ELEVATORS / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern |
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