A semiconductor device of an embodiment includes: a silicon carbide layer including a first silicon carbide region of n-type containing one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr) and a second silicon carbide region of p-type containing the metal element; and a metal layer electrically connected to the first silicon carbide region and the second silicon carbide region. Among the metal elements contained in the first silicon carbide region, a proportion of the metal element positioned at a carbon site is higher than a proportion of the metal element positioned at an interstitial position. Among the metal elements contained in the second silicon carbide region, a proportion of the metal element positioned at an interstitial position is higher than a proportion of the metal element positioned at a carbon site.


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    Titel :

    Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator


    Beteiligte:
    SHIMIZU TATSUO (Autor:in)

    Erscheinungsdatum :

    2022-06-07


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / B61C Lokomotiven , LOCOMOTIVES / B66B Aufzüge , ELEVATORS / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern






    Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

    SHIMIZU TATSUO / IIJIMA RYOSUKE / ITO TOSHIHIDE et al. | Europäisches Patentamt | 2020

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    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AND ELEVATOR

    SHIMIZU TATSUO / IIJIMA RYOSUKE / ITO TOSHIHIDE et al. | Europäisches Patentamt | 2019

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