A semiconductor device according to an embodiment includes a silicon carbide layer having a first and second plane, first and second trench extending in first direction, and in the silicon carbide layer, n-type first region, p-type second region between the n-type first region and the first plane and between the first and second trench, p-type fifth region covering bottom of the first trench, p-type sixth region covering bottom of the second trench, n-type seventh region between the fifth region and the second region, n-type eighth region between the sixth and second regions, p-type ninth regions contacting the fifth and second regions, and p-type tenth regions contacting the sixth region and the second region, the ninth and tenth regions repeatedly disposed in the first direction, and a line segment connecting the ninth region and the tenth region is oblique with respect to second direction perpendicular to the first direction.


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    Titel :

    Semiconductor device, inverter circuit, driving device, vehicle, and elevator


    Beteiligte:
    OSHIMA TOSHIYUKI (Autor:in) / KYOGOKU SHINYA (Autor:in) / IIJIMA RYOSUKE (Autor:in) / SHIMIZU TATSUO (Autor:in)

    Erscheinungsdatum :

    08.09.2020


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B66B Aufzüge , ELEVATORS / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen



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