To provide an avalanche photodiode with a good performance by establishing optimal relationships on the configuration and arrangement location of wiring.SOLUTION: A photoelectric conversion device has a semiconductor layer 302 including a plurality of avalanche photodiodes and a wiring structure 303. An avalanche photodiode includes a first semiconductor area 311 of a first conductivity type and a second semiconductor area 312 of a second conductivity type. The wiring structure 303 includes a first wiring 326, a contact plug 320 that connects the first wiring 326 to the semiconductor area 312 of the second conductivity type, and a second wiring 322 that supplies a drive voltage to the first semiconductor area 311. The distance between the second wiring 322 and the semiconductor layer 302 is smaller than the distance between the first wiring 326 and the semiconductor layer 302.SELECTED DRAWING: Figure 6
【課題】配線の構成や配置位置について最適な関係を構築し、性能の良いアバランシェフォトダイオードを提供する。【解決手段】光電変換装置は複数のアバランシェフォトダイオードを含む半導体層302と、配線構造303と、を有し、アバランシェフォトダイオードは、第1導電型の第1半導体領域311と、第2導電型の第2半導体領域312とを有し、配線構造303は、第1配線326と、第1配線326と第2導電型の半導体領域312とを接続するコンタクトプラグ320と、第1半導体領域311に駆動電圧を供給する第2配線322と、を有し、第2配線322と半導体層302との距離は、第1配線326と半導体層302との距離よりも小さい。【選択図】図6
PHOTOELECTRIC CONVERSION DEVICE AND LIGHT DETECTION SYSTEM
光電変換装置、光検出システム
2022-08-03
Patent
Elektronische Ressource
Japanisch
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