PROBLEM TO BE SOLVED: To provide an infrared emissivity control device low in emissivity of infrared ray causing temperature increase under high temperature environment such as approaching high temperature planet when applied to a spacecraft, i.e. high in emissivity of infrared ray, capable of suppressing inner temperature rise of the aerospace, high in heat shielding property, high in emissivity of infrared ray under ultra low temperature such as space, capable of effectively releasing heat in the aerospace to outside as infrared ray and excellent in heat exchangeability.SOLUTION: There is provided an infrared emissivity control device having a vanadium dioxide crystal layer, which has phase transition temperature between rutile type crystal structure-monoclinic crystal structure, and having a property that infrared emissivity at higher temperature than the phase transition temperature is lower than that at lower temperature than the phase transition temperature.SELECTED DRAWING: Figure 2

    【課題】宇宙機に適用した場合、高温の惑星に接近したときなどの高温環境下では、温度上昇の要因となる赤外線の放射率が低く(即ち、赤外線の反射率が高く)、宇宙機の内部温度の上昇を抑えることができ、遮熱性が高く、一方、宇宙空間のような極低温環境下では赤外線の放射率が高く、宇宙機内部の熱を赤外線として効率良く外部に放出させることができ、熱交換性に優れる赤外線放射率制御デバイスを提供する。【解決手段】二酸化バナジウム結晶層を備え、前記二酸化バナジウム結晶層はルチル型結晶構造−単斜晶型結晶構造間の相転移温度を持ち、前記相転移温度よりも高い温度での赤外線放射率が、前記相転移温度よりも低い温度での赤外線放射率よりも低い特性を有する赤外線放射率制御デバイス。【選択図】図2


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    Titel :

    INFRARED EMISSIVITY CONTROL DEVICE, INFRARED EMISSIVITY CONTROL EQUIPMENT AND SPACECRAFT


    Weitere Titelangaben:

    赤外線放射率制御デバイス、赤外線放射率制御装置および宇宙機


    Beteiligte:
    TACHIKAWA SUMITAKA (Autor:in) / HATA SANEHIRO (Autor:in) / YAMAMOTO SAYAKA (Autor:in)

    Erscheinungsdatum :

    31.05.2018


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Japanisch


    Klassifikation :

    IPC:    C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / B64G Raumfahrt , COSMONAUTICS



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