A semiconductor structure includes a field effect transistor (FET) having a source/drain, a contact in contact with the source/drain, and a buried power rail including a conductive material, wherein the buried power rail is in contact with the contact, wherein a first portion of the buried power rail closest to the contact has a first thickness, and wherein a second portion of the buried power rail has a second thickness such that the first thickness is less than the second thickness.
Buried power rail for semiconductors
10.01.2024
Patent
Elektronische Ressource
Englisch
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