AbstractA MicroElectronics Test Package (MEP) measured total dose degradation and single event upsets (SEUs) on 60 device types on the Combined Release and Radiation Effects Satellite (CRRES) in an 18° inclination orbit between 350 km and 36000 km from July 1990 to October 1991. Simultaneous measurements of the high energy particle environment were used to make a direct cause and effect comparison of the energetic particle backgrounds and microelectronic performance characteristics. The galactic cosmic ray background for the period of the CRRES mission was at a minimum. The SEUs experienced from the cosmic ray background were correspondingly few in number, but surprisingly produced an equal probability of upset over an L-shell range of 8.5 Earth radii (RE) down to less than 3.0 RE. Cosmic ray induced upset frequencies in proton sensitive chips were over 2 orders of magnitude lower than those produced by protons in the heart of the inner proton radiation belts. Multiple upsets, those produced when a single particle upsets more than one memory location, were just as common from protons as from cosmic rays.
Microelectronics effects as seen on CRRES
Advances in Space Research ; 14 , 10 ; 797-807
1994-01-01
11 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
Microelectronics Effects as Seen on CRRES
Online Contents | 1994
|Pitch Angle Diffusion as Seen by CRRES
British Library Conference Proceedings | 2000
|Solar particle events as seen on CRRES
Elsevier | 1994
|Solar Particle Events as seen on CRRES
Online Contents | 1994
|Pitch Angle Diffusion as Seen by CRRES
Online Contents | 2000
|