AbstractA MicroElectronics Test Package (MEP) measured total dose degradation and single event upsets (SEUs) on 60 device types on the Combined Release and Radiation Effects Satellite (CRRES) in an 18° inclination orbit between 350 km and 36000 km from July 1990 to October 1991. Simultaneous measurements of the high energy particle environment were used to make a direct cause and effect comparison of the energetic particle backgrounds and microelectronic performance characteristics. The galactic cosmic ray background for the period of the CRRES mission was at a minimum. The SEUs experienced from the cosmic ray background were correspondingly few in number, but surprisingly produced an equal probability of upset over an L-shell range of 8.5 Earth radii (RE) down to less than 3.0 RE. Cosmic ray induced upset frequencies in proton sensitive chips were over 2 orders of magnitude lower than those produced by protons in the heart of the inner proton radiation belts. Multiple upsets, those produced when a single particle upsets more than one memory location, were just as common from protons as from cosmic rays.


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    Titel :

    Microelectronics effects as seen on CRRES


    Beteiligte:
    Mullen, E.G. (Autor:in) / Ray, K.P. (Autor:in)

    Erschienen in:

    Advances in Space Research ; 14 , 10 ; 797-807


    Erscheinungsdatum :

    1994-01-01


    Format / Umfang :

    11 pages




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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