Phonon transport in a two-dimensional silicon–diamond film pair is investigated. The frequency dependent Boltzmann equation is solved numerically while introducing the transient effect. Equivalent equilibrium temperature distribution in the silicon and the diamond films is predicted to assess the ballistic contribution of phonons on energy transport. Thermal boundary resistance is introduced at the interface of the silicon–diamond films to account for the acoustic speeds and phonon frequencies mismatch between the films. The study is extended to include the frequency independent solution of the Boltzmann transport equation for comparison. It is found that ballistic contribution of phonons on energy transport is significant in the film pair, and thus ballistic phonons suppress equivalent equilibrium temperature increase in both films.


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    Titel :

    Phonon Transport in Two-Dimensional Silicon–Diamond Film Pair


    Beteiligte:
    Yilbas, B. S. (Autor:in) / Mansoor, S. B. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2013-05-17


    Format / Umfang :

    9 pages




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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