A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18 μm CMOS technology
OPTICAL AND QUANTUM ELECTRONICS ; 49 , 9 ; 1-10
2017-01-01
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Integrated Silicon PIN Photodiodes Using Deep N-Well in a Standard 0.18-μm CMOS Technology
British Library Online Contents | 2009
|Wideband channelized receiver possibilities with 0.18 micron CMOS technology
Tema Archiv | 1998
|Black silicon for photodiodes: experimentally implemented and FDTD simulated
TIBKAT | 2011
|Low noise avalanche photodiodes
IEEE | 2005
|Low noise avalanche photodiodes
IEEE | 2001
|