Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
OPTICAL AND QUANTUM ELECTRONICS ; 47 , 4 ; 873-882
01.01.2015
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys
British Library Online Contents | 2015
|Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy [4454-36]
British Library Conference Proceedings | 2001
|Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy
Online Contents | 1995
|InAs Quantum Dots on InP(100) Grown by Metalorganic Vapor-Phase Epitaxy
British Library Conference Proceedings | 2003
|