Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm
Special Issue on Numerical Simulation of Optoelectronic Devices ; 5/6 ; 301-306
OPTICAL AND QUANTUM ELECTRONICS ; 40 , 5/6
2008-01-01
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
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