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    Titel :

    Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible With CMOS Technology



    Kongress:

    Symposium, Rare-earth doping for optoelectronic applications ; 2005 ; San Francisco, CA



    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    6 pages


    Anmerkungen:

    Held as part of the 2005 MRS spring meeting



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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