Simulation Study of the DC And AC Characteristics of an Improved InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with an InGaP Wide Bandgap Collector
Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia
2002-01-01
4 pages
IEEE cat no 02EX601
Aufsatz (Konferenz)
Englisch
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