Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Electrical properties of HgMnTe Schottky diodes [5065-18]



    Kongress:

    International conference; 6th, Material science and material properties for infrared optoelectronics ; 2002 ; Kiev, Ukraine



    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 5065

    DataCite | 1942


    Quartz as artificial pyroactive material [5065-12]

    Kosorotov, V. F. / Blonsky, I. V. / Shchedrina, L. V. et al. | British Library Conference Proceedings | 2003


    Spectral responsivity of HgMnTe photodiodes [4355-15]

    Sun, W. / Rarenko, I. M. / Ostapov, S. E. et al. | British Library Conference Proceedings | 2001


    Electrical and optical properties of indium antimonide doped by cadmium and tellurium [5065-20]

    Brodovoi, A. V. / Pleskatch, P. V. / Bunchuk, S. G. et al. | British Library Conference Proceedings | 2003


    Nonelastic electron scattering in HgTe [5065-13]

    Malyk, O. P. / International Society for Optical Engineering / National Academy of Sciences of Ukraine | British Library Conference Proceedings | 2003