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    Titel :

    Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy [4795-03]



    Kongress:

    Conference; 2nd, Materials for infrared detectors ; 2002 ; Seattle, WA



    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    9 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]

    Sewell, R. / Dell, J. M. / Musca, C. A. et al. | British Library Conference Proceedings | 2002


    SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy [4795-35]

    Kim, J.-S. / An, S.-Y. / Suh, S.-H. et al. | British Library Conference Proceedings | 2002


    Progress in MBE growth of HgCdTe at SITP [4795-05]

    He, L. / Wu, Y. / Chen, L. et al. | British Library Conference Proceedings | 2002


    Optical and electronic characterization on HgCdTe materials [4795-11]

    Chu, J. H. / Chang, Y. / Huang, Z. M. et al. | British Library Conference Proceedings | 2002


    MBE growth of HgCdTe HOT detector heterostructures [4795-16]

    Zhao, J. / Zhou, Y. D. / Badano, G. et al. | British Library Conference Proceedings | 2002