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    Titel :

    Electrical activation and electrical properties of arsenic-doped Hg~1~-~xCd~xTe epilayers grown by MBE [4454-10]



    Kongress:

    Conference, Materials for infrared detectors ; 2001 ; San Diego, CA



    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    7 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 4454

    DataCite | 1930


    MWIR HgCdTe avalanche photodiodes (Invited Paper) [4454-23]

    Beck, J. D. / Wan, C.-F. / Kinch, M. A. et al. | British Library Conference Proceedings | 2001


    GaInAs/InP quantum well infrared photodetectors grown on Si substrates (Invited Paper) [4454-14]

    Razeghi, M. / Jiang, J. / Jelen, C. L. et al. | British Library Conference Proceedings | 2001


    Au-doped HgCdTe for infrared detectors and focal plane arrays [4454-17]

    Chu, M. / Terterian, S. / Wang, P. C. C. et al. | British Library Conference Proceedings | 2001


    Proposed two-color HgCdTe focal plane array [4454-07]

    Dhar, V. / Gopal, V. / International Society for Optical Engineering | British Library Conference Proceedings | 2001