Electrical activation and electrical properties of arsenic-doped Hg~1~-~xCd~xTe epilayers grown by MBE [4454-10]
Conference, Materials for infrared detectors ; 2001 ; San Diego, CA
2001-01-01
7 pages
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
DataCite | 1930
MWIR HgCdTe avalanche photodiodes (Invited Paper) [4454-23]
British Library Conference Proceedings | 2001
|GaInAs/InP quantum well infrared photodetectors grown on Si substrates (Invited Paper) [4454-14]
British Library Conference Proceedings | 2001
|Au-doped HgCdTe for infrared detectors and focal plane arrays [4454-17]
British Library Conference Proceedings | 2001
|Proposed two-color HgCdTe focal plane array [4454-07]
British Library Conference Proceedings | 2001
|