ThP3 The Properties of Ion-Implanted InGaAs Single Quantum-Well Semiconductor Saturable Absorber Mirrors for Passive Mode-Locking
Annual meeting; 14th, IEEE; Lasers and Electro-Optics Society ; 2001 ; San Diego, CA
01.01.2001
2 pages
IEEE cat no 01CH37242
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fast Quantum-Dot Saturable Absorber for Passive Mode-Locking of Solid-State Lasers
British Library Conference Proceedings | 2003
|Antimonide Semiconductor Saturable Absorber for Passive Mode Locking of a 1.5-mum Er:Yb:Glass Laser
British Library Conference Proceedings | 2005
|Silicon-germanium saturable absorber mirrors
IEEE | 2004
|