Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation [4340-29]



    Kongress:

    International conference; 16th, Photoelectronics and night-vision devices ; 2000 ; Moscow



    Erscheinungsdatum :

    2000-01-01


    Format / Umfang :

    27 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) on an increase in the concentration of recombination centers

    Kholodnov, V. A. / Russian Federation RD &P Centre ORION; State Scientific Centre | British Library Conference Proceedings | 1999


    Nr. 4340

    DataCite | 1928


    On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation [5126-44]

    Kholodnov, V. A. / Drugova, A. A. / Research, Development and Production Centre ORION (Russia) | British Library Conference Proceedings | 2003


    Methods of determining the deep defect concentration [4340-31]

    Karazhanov, S. Z. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000


    Femtosecond photoelectronics [4340-25]

    Prokhorov, A. M. / Schelev, M. Y. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000