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    Titel :

    Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures [4340-26]



    Kongress:

    International conference; 16th, Photoelectronics and night-vision devices ; 2000 ; Moscow



    Erscheinungsdatum :

    01.01.2000


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 4340

    DataCite | 1928


    Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction [4340-37]

    Britov, A. D. / Dirochka, A. I. / Serebrennikov, P. S. et al. | British Library Conference Proceedings | 2000


    High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor [2969-26]

    Cherkasov, Y. A. / Zakharova, N. B. / Alexandrova, E. L. et al. | British Library Conference Proceedings | 1996


    Femtosecond photoelectronics [4340-25]

    Prokhorov, A. M. / Schelev, M. Y. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000


    Mathematical modeling of thermal modes of multilayer photodetector structures [4340-47]

    Melnikov, A. A. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000