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    Titel :

    Precipitation mechanism of GaAs~1~-~xP~x/GaAs in the isothermal CVD method [3890-78]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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