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    Titel :

    Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    7 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Photoelectric and kinetic properties of PbTe(Ga) films [3890-35]

    Akimov, B. A. / Bogoyavlenskiy, V. A. / Ryabova, L. I. et al. | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films [3890-34]

    Akimov, B. A. / Bogoyavlenskiy, V. A. / Ryabova, L. I. et al. | British Library Conference Proceedings | 1999


    Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]

    Zlomanov, V. P. / Tkalich, A. K. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Electronic properties and energy spectrum of SnTe doped with In [3890-58]

    Rogacheva, E. I. / Laptev, S. A. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999