Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]
International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev
1999-01-01
5 pages
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoelectric and kinetic properties of PbTe(Ga) films [3890-35]
British Library Conference Proceedings | 1999
|Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]
British Library Conference Proceedings | 1999
|DataCite | 1920
Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films [3890-34]
British Library Conference Proceedings | 1999
|Impurity profile determination by the optimal parameter choice method [3890-44]
British Library Conference Proceedings | 1999
|