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    Titel :

    Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Photoelectric and kinetic properties of PbTe(Ga) films [3890-35]

    Akimov, B. A. / Bogoyavlenskiy, V. A. / Ryabova, L. I. et al. | British Library Conference Proceedings | 1999


    Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]

    Bondokov, R. T. / Dimitrov, D. T. / Moshnikov, V. A. et al. | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films [3890-34]

    Akimov, B. A. / Bogoyavlenskiy, V. A. / Ryabova, L. I. et al. | British Library Conference Proceedings | 1999


    Impurity profile determination by the optimal parameter choice method [3890-44]

    Karachevtseva, L. A. / Sobolev, V. D. / Demina, I. K. et al. | British Library Conference Proceedings | 1999