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    Titel :

    Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas (Invited Paper) [3550-61]


    Beteiligte:

    Kongress:

    Conference; 2nd, Laser processing of materials and industrial applications ; 1998 ; Beijing



    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    8 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    High-power diode lasers and their applications (Invited Paper) [3550-75]

    Du, K. / SPIE | British Library Conference Proceedings | 1998


    Growth and characterization of -FeSi~2 thin films prepared by laser ablation method (Invited Paper) [3550-57]

    Kakemoto, H. / Makita, Y. / Sakuragi, S. et al. | British Library Conference Proceedings | 1998


    Laser direct writing system and its lithography properties (Invited Paper) [3550-35]

    Yang, G. / Shen, Y. / SPIE | British Library Conference Proceedings | 1998


    Development and tendency of rapid prototyping technology (Invited Paper) [3550-20]

    Yan, Y. / Hong, G. / SPIE | British Library Conference Proceedings | 1998


    Laser ablation of PMMA doped with benzyl [3550-51]

    Wang, J. / Niino, H. / Yabe, A. et al. | British Library Conference Proceedings | 1998