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    Titel :

    High-performance 1.3- and 1.55-m InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD (Invited Paper) [2891-522]



    Kongress:

    Conference, Integrated optoelectronics ; 1996 ; Beijing



    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    1.3- and 1.55-m InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence [2891-537]

    Ma, X. / Wang, S. / Xiong, F. et al. | British Library Conference Proceedings | 1996


    GaAs/GaAlAs multiple quantum well electroflectance modulators (Invited Paper) [2891-521]

    Chen, H. / Chen, Z. / Gao, W. et al. | British Library Conference Proceedings | 1996


    Growth and Characterization of 1.55 m InGaAs/InGaAsP Multiple Quantum Well Fabry-Perot and DFB Lasers Grown by Low Pressure MOCVD

    McCrary, V. R. / Ketelsen, L. J. / Napholtz, S. G. et al. | British Library Conference Proceedings | 1995


    OCAP: a general OEIC simulator (Invited Paper) [2891-524]

    Chen, W. / Liu, S. / SPIE et al. | British Library Conference Proceedings | 1996


    Recent advances in microcavity disk lasers and photonic wire lasers (Invited Paper) [2891-515]

    Ho, S.-T. / Zhang, J.-P. / Wang, L. et al. | British Library Conference Proceedings | 1996