High-power GRIN-SCH lasers with low-threshold-current density and high efficiency [2886-533]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
4 pages
Aufsatz (Konferenz)
Englisch
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DataCite | 1900
LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]
British Library Conference Proceedings | 1996
|Semiconductor lasers in China (Invited Paper) [2886-518]
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|0.808-m InGaAsP/GaAs SCH lasers [2886-566]
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|MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]
British Library Conference Proceedings | 1996
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