High-power laser diodes at wavelength 1.06 m grown by MOCVD [2683-21]
Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA
1996-01-01
7 pages
Held as part of the SPIE OE/LASE '96 Symposium
Aufsatz (Konferenz)
Englisch
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DataCite | 1896
Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells [2683-01]
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1996
|Reliability of Carbon Doped MOCVD Grown InGaAs/AlGaAs High Power Laser Diodes
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