Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-power double lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers [2683-20]


    Beteiligte:

    Kongress:

    Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    10 pages


    Anmerkungen:

    Held as part of the SPIE OE/LASE '96 Symposium




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 2683

    DataCite | 1896


    Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers

    Unger, P. / Bona, G. L. / Germann, R. et al. | British Library Conference Proceedings | 1992


    Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers

    Unger, P. / Bona, G.L. / Germann, R. et al. | IEEE | 1992


    Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells [2683-01]

    Sun, D. / Beernink, K. J. / Thornton, R. L. et al. | British Library Conference Proceedings | 1996


    Power penalty due to timing jitter for lasers modulated prebias [2683-12]

    Dutta, N. K. / SPIE | British Library Conference Proceedings | 1996