High-power double lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers [2683-20]
Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA
1996-01-01
10 pages
Held as part of the SPIE OE/LASE '96 Symposium
Aufsatz (Konferenz)
Englisch
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DataCite | 1896
Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers
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|Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells [2683-01]
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|Power penalty due to timing jitter for lasers modulated prebias [2683-12]
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