Reproducible Growth of High Quality Lattice Matched GaInAsP on InP by Solid Source MBE using Phosphorus and Arsenic Valved Cracking Cells
Summer topical meeting, Optoelectronic materials growth and processing ; 1994 ; Lake Tahoe; NV
1994-01-01
2 pages
Contains 4 conferences published jointly. IEEE Cat no 94TH0606-4; Shelving title: LEOS 1994
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Solid Source MBE Growth of Lattice Matched GaInAsP with Phosphorus and Arsenic Valved Cracking Cells
British Library Conference Proceedings | 1994
|Microprocessor-Based Valved Controller
NTRS | 1987
|SOLUTIONS - Materials - Reproducible Growth of High-Quality Cubic-SiC Layers
Online Contents | 2004