1–9 von 9 Ergebnissen
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    Time-resolved photoluminescence studies of carrier diffusion in Si-doped GaInN/GaN quantum wells

    Olaizola, S.M. / Skolnick, M.S. / Mowbray, D.J. et al. | IEEE | 2003

    Maximising the Gain and Minimising the Non-Radiative Recombination in 1.3μm Quantum Dot Lasers

    Smowton, P.M. / Sandall, I.C. / Walker, C.L. et al. | IEEE | 2006

    Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures

    Tartakovskii, A.I. / Kolodka, R.S. / Mowbray, D.J. et al. | IEEE | 2005

    Electron capture time in InGaN/GaN multiple quantum wells

    Fan, W.H. / Olaizola, S.M. / Wells, J.-P.R. et al. | IEEE | 2004

    Optimization of gain in multilayer GaInP quantum dots

    Smowton, P.M. / Lutti, J. / Lewis, G.M. et al. | IEEE | 2004