1–11 von 11 Ergebnissen
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    630-nm laser diode array for laser-beam printer formed by impurity diffusion [3628-24]

    Nakatsuka, S. / Saito, S. / SPIE et al. | British Library Conference Proceedings | 1999

    680-nm multi-element laser-diode array for high-speed and high-resolution laser printers

    Nakatsuka, S. / Sakamoto, J. / Sakaki, K. et al. | IEEE | 2001

    680-nm Multi-Element Laser-Diode Array for High-Speed and High-Resolution Laser Printers

    Nakatsuka, S. / Sakamoto, J. / Sasaki, K. et al. | British Library Conference Proceedings | 2001

    Continuous wave operation of GaInNAs laser diode at room temperature

    Kondow, M. / Nakatsuka, S. / Kitatani, T. et al. | IEEE | 1996

    GaInNAs Laser Diode

    Kondow, M. / Kitatani, T. / Nakatsuka, S. et al. | IEEE | 1997

    High-speed operation of GaInNAs edge emitting lasers

    Kondow, M. / Aoki, M. / Nakatsuka, S. et al. | IEEE | 2002

    Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)

    Kondow, M. / Kitatani, T. / Aoki, M. et al. | IEEE | 2001

    Laser diode with controllable spot size ratio of 1:2.1

    Nakatsuka, S. / Maruo, S. / Arimoto, A. et al. | IEEE | 1995

    Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser

    Aoki, A. / Kondow, M. / Kitatani, T. et al. | IEEE | 2002

    Structure dependence of temperature rise in semiconductor lasers

    Nomoto, E. / Nakatsuka, S. / Sato, H. et al. | IEEE | 2004