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    Large near resonance third order nonlinearity in GaN

    Sun, C.-K. / Huang, Y.-L. / Liang, J.-C. et al. | British Library Online Contents | 2000

    Critical issues of localization in the development of InGaN/GaN laser diodes

    Bidnyk, S. / Yong-Hoon Cho, / Schmidt, C.T.J. et al. | IEEE | 1999

    GaN characterizations using femtosecond optical pulses

    Chi-Kuang Sun, / Yong-Liang Huang, / Jiun-Cheng Wang, et al. | IEEE | 1999

    Comparison of spontaneous and stimulated emission from UV-blue photonic materials

    Little, B.D. / Yong-Hoon Cho, / Schmidt, T.J. et al. | IEEE | 1999

    MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs

    DenBaars, S.P. / Kozodoy, P. / Abare, A. et al. | IEEE | 1997

    Gain spectroscopy in lnGaN/GaN quantum well diodes

    Kuball, M. / Jeon, E.S. / Song, Y.K. et al. | IEEE | 1997

    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

    Keller, S. / Mishra, U.K. / DenBaars, S.P. | IEEE | 1996