Barrier height and current passage mechanisms in Schottky diodes based in Mn~xHg~1~-~xTe [4355-08]
MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge [4355-42]
Influence of light hole band nonparabolicity on CdHgTe transport properties [4355-20]
Compensation in semi-intrinsic CdTe-based materials [4355-36]
Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method [4355-24]
Polarization properties of the luminescence from silicon nanocrystals [4355-19]
Dynamic halo scattering in photorefractive crystals [4355-34]
Gap deep defect states in narrow-gap semiconductors [4355-29]
Magnetic properties of Pb~1~-~xGe~xTe alloys doped with ytterbium [4355-26]
Mechanical strain and degradation of laser heterostructures [4355-12]
Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe [4355-04]
CdTe substrate purification from impurities by gettering [4355-38]
Dark current and noise in In/Zn/p-InAs and In/n-InAs [4355-17]
High infrared sensitivity of n-PbTe(Ga) thin films [4355-05]
Growth and some properties of tellurium compound whiskers [4355-41]