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title: In-plane semiconductor laser III
In-plane semiconductor lasers III : 27 - 29 January 1999, San Jose, California
Stability of a III-V/Si hybrid laser with a frequency-selective SiN mirror
Dual-wavelength semiconductor laser with 191-nm mode spacing
Superlattice quantum cascade lasers (Invited Paper) [3628-28]
High-brightness flared lasers (Invited Paper) [3628-11]
Grating-based red lasers (Invited Paper) [3628-22]
1550-nm single-mode grating-outcoupled surface emitting lasers
Integrated multi-wavelength DFB laser with 200 GHz channel spacing
Issues in mid-IR type-II interband cascade lasers [3628-30]
Optically pumped InAs/InGaSb type-II quantum-well lasers [3628-34]
InGaN/GaN MQW SCH lasers grown on SiC (Invited Paper) [3628-20]
Three years of InGaN quantum-well lasers: commercialization already (Invited Paper) [3628-19]
High-power red lasers for DVD-RAM drives (Invited Paper) [3628-23]
High-power Al-free coherent and incoherent diode lasers (Invited Paper) [3628-01]
Five years of quantum cascade lasers: progress and challenges (Invited Paper) [3628-27]
Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion [3628-16]
High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy [3628-25]
630-nm laser diode array for laser-beam printer formed by impurity diffusion [3628-24]