High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser Diodes
1.07 m (InAs)~1/(GaAs)~2 Short Period Superlattice Strained Quantum Well Ridge Waveguide Laser
Low Threshold, High Power, Single Mode 630 nm Lasers
Development of 2.2 m Emission Ridge Waveguide Lasers with Low Threshold GaInAsSb/GaAlAsSb DH Wafers
Broadly Tunable (202 ) Mode-Locked Monolithic Laser with an Integrated Vertical Coupler Filter
Characteristics of the Laser Diode with Partially Intermixed GaAs/AlGaAs Quantum Well