Synonyme wurden verwendet für:
Night
•
Night vision
•
vision
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keywords:(Night vision)
Perspective photoreceivers for visible and near-infrared region of spectrum [4340-17]
Ultraviolet photodetectors based on GaN and Al~xGa~1~-~xN epitaxial layers [4340-12]
Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics [4340-34]
Methods of determining the deep defect concentration [4340-31]
Rising perspectives of the threshold characteristics of night vision devices [4340-19]
128x128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range [4340-06]
Development of Regulations for Civilian Use of NVGs
MCT heterostructure design and growth by MBE for IR devices [4340-33]
LWIR heterodyne HgCdTe detectors [4340-10]
IR detector performance in an area array [4340-05]
Source of intense beam of ions with low energy [4340-48]
Material aspects of OEIC development based on A^2B^6 compounds on silicone and sapphire [4340-36]
Adequacy of modeling the environment in the interest of developing night vision devices [4340-22]
Development of 65x1 uncooled membrane-type microbolometer array [4340-08]
Sensitive element dimension measurements in focal plane arrays
Linear HgCdTe scanning focal plane arrays with time delay and integration
Mathematical modeling of thermal modes of multilayer photodetector structures [4340-47]
Analysis of ultimate abilities of ideal thermal imagers at observation of point emitters [4340-41]
IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells [4340-02]
Helicopter Pilot Estimation of Self-Altitude in a Degraded Visual Environment
Electron emission from a glass surface subjected to an intensive electron beam
Perspective method of receiving the epitaxial layers and p-n structures at superhigh vacuum
Ultimate performance of new infrared HgCdTe focal plane arrays
Peculiarities of growth and electrophysical properties of epitaxial films of Pb~1~-~xSn~xSe:In
Influence of ionizing radiation based on basic parameters of photodiodes based on indium selenide
Ultraviolet photodetectors based on wide-bandgap A^3B^5 compounds
HgCdTe photodiode performance degradation
Electrohydrodynamic source of ions and microdroplets
Ultraviolet small-sized multichannel photodetecting assembly based on a GaP photodiode
Fabrication details of GaInAsSb-based photodiode heterostructures [4340-35]
Photodetectors of IR radiation on the basis of CdS~1~-~xSe~x films deposited from solution [4340-15]
128x128 IR FPA based on GaAs/AlGaAs MQW [4340-04]
IR imager based on a 128 x 128 HgCdTe staring focal plane array
Mercury cadmium-telluride photodiodes and focal plane arrays