1–9 von 9 Ergebnissen
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    Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures

    Yung-Chen Cheng, / Horng-Shyang Chen, / Yang, C.C. et al. | IEEE | 2003

    Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices

    Yung-Chen Cheng, / En-Chiang Lin, / Meng-Kuo Chen, et al. | IEEE | 2004

    Microstructure studies of InGaN/GaN multiple quantum wells

    Yen-Sheng Lin, / Chen Hsu, / Kung-Jeng Ma, et al. | IEEE | 2001

    Quantum dot structures and their optical properties of a high-indium InGaN film

    Shih-Wei Feng, / En-Chiang Lin, / Yung-Chen Cheng, et al. | IEEE | 2003

    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Yung-Chen Cheng, / En-Chiang Lin, / Shih-Wei Feng, et al. | IEEE | 2003

    Indium aggregated quantum dot structures in InGaN compounds

    Yang, C.C. / Shih-Wei Feng, / Yung-Chen Cheng, et al. | IEEE | 2003