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keywords:(Nachtsichtgerät)
Fabrication details of GaInAsSb-based photodiode heterostructures [4340-35]
Photodetectors of IR radiation on the basis of CdS~1~-~xSe~x films deposited from solution [4340-15]
128x128 IR FPA based on GaAs/AlGaAs MQW [4340-04]
Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics [4340-34]
Methods of determining the deep defect concentration [4340-31]
Rising perspectives of the threshold characteristics of night vision devices [4340-19]
Multichannel infrared imager [4340-20]
Dual-band infrared focal plane arrays [4340-01]
MCT heterostructure design and growth by MBE for IR devices [4340-33]
LWIR heterodyne HgCdTe detectors [4340-10]
IR detector performance in an area array [4340-05]
Source of intense beam of ions with low energy [4340-48]
Material aspects of OEIC development based on A^2B^6 compounds on silicone and sapphire [4340-36]
Adequacy of modeling the environment in the interest of developing night vision devices [4340-22]