1–7 von 7 Ergebnissen
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    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

    Keller, S. / Mishra, U.K. / DenBaars, S.P. | IEEE | 1996

    Passive stimulated Brillouin scattering suppression for broadband passive optical networks

    Boh Ruffin, A. / Annunziata, F. / Bickham, S. et al. | IEEE | 2004

    MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs

    DenBaars, S.P. / Kozodoy, P. / Abare, A. et al. | IEEE | 1997

    Critical issues of localization in the development of InGaN/GaN laser diodes

    Bidnyk, S. / Yong-Hoon Cho, / Schmidt, C.T.J. et al. | IEEE | 1999

    GaN characterizations using femtosecond optical pulses

    Chi-Kuang Sun, / Yong-Liang Huang, / Jiun-Cheng Wang, et al. | IEEE | 1999

    Gain spectroscopy in lnGaN/GaN quantum well diodes

    Kuball, M. / Jeon, E.S. / Song, Y.K. et al. | IEEE | 1997

    Comparison of spontaneous and stimulated emission from UV-blue photonic materials

    Little, B.D. / Yong-Hoon Cho, / Schmidt, T.J. et al. | IEEE | 1999