Five years of quantum cascade lasers: progress and challenges (Invited Paper) [3628-27]
Comparison of mid-infrared laser diode active regions [3628-35]
High-optical-intensity 2D AlGaAs laser arrays [3628-10]
Aluminum-free active-area laser bars at 790- to 830-nm wavelengths (Invited Paper) [3628-02]
High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy [3628-25]
Issues in mid-IR type-II interband cascade lasers [3628-30]
High-power InAlGaAs laser diodes with high efficiency at 980 nm [3628-36]
High-performance circular grating-coupled surface emitter with focused output beam [3628-13]
High-brightness flared lasers (Invited Paper) [3628-11]
InGaN/GaN MQW SCH lasers grown on SiC (Invited Paper) [3628-20]
High-power Al-free coherent and incoherent diode lasers (Invited Paper) [3628-01]
Fundamental-mode laser power rise by means of facet inclination [3628-18]
Highly reliable 40-W cw InGaAlAs/GaAs 808-nm laser bars [3628-09]
Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion [3628-16]