Characteristics of Al~xIn~1~—~xAs~ySb~1~—~y (x:0.3—0.7) Avalanche Photodiodes
High-Speed Monolithic Silicon Photoreceivers on High Resistivity and SOI Substrates
High-Speed Monolithically Integrated Silicon Photoreceivers Fabricated in 130-nm CMOS Technology
Monolithically integrated silicon NMOS-PIN photoreceiver [2400-38]
Design of a Resonant-Cavity-Enhanced p-i-n GaN/Al~xGa~1~-~xN Photodetector
The HgCdTe electron avalanche photodiode (Invited Paper) [5564-21]
High-Finesse Resonant-Cavity Photodetectors with an Adjustable Resonance Frequency
Recent Developments in Avalanche Photodiodes (invited)