Very long wavelength (> 15 mum) HgCdTe photodiodes by liquid phase epitaxy (Invited Paper) [5564-09]
Uncooled InAs photodiodes for optoelectronic sensors [5564-16]
Two-color HgCdTe infrared staring focal plane arrays (Invited Paper) [5209-01]
The HgCdTe electron avalanche photodiode (Invited Paper) [5564-21]
Superlattices for very long wavelength infrared detectors [5209-08]
Polycrystalline SiGe technology for uncooled microbolometer arrays [5209-10]
Photoelectric properties of crystalline silicon: theory and application [5564-25]
Phase transition in ferroelectric hemicyanine Langmuir-Blodgett multilayers [5564-17]
Optimizing indium aluminum antimonide LEDs and photodiodes for gas sensing applications [5564-15]
MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates [5564-26]
Monolithically integrated HgCdTe focal plane arrays [5209-02]
Measurement of electron effective mass ratios in Hg~1~-~xCd~xTe for 0.20
Materials for infrared detectors III : 7 - 8 August 2003, San Diego, California, USA
Materials for infrared detectors II : 8 - 9 July 2002, Seattle, Washington, USA