Barrier height and current passage mechanisms in Schottky diodes based in Mn~xHg~1~-~xTe [4355-08]
CdTe substrate purification from impurities by gettering [4355-38]
Dark current and noise in In/Zn/p-InAs and In/n-InAs [4355-17]
High infrared sensitivity of n-PbTe(Ga) thin films [4355-05]
Chemical cutting process in narrow-gap semiconductors [4355-46]
MCT heterostructure design and growth by MBE for IR devices [4355-35]
Controling the properties of bulk Hg~1~-~xCd~xTe by laser-induced shock waves [4355-30]
IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells [4355-02]
Dynamic halo scattering in photorefractive crystals [4355-34]
Gap deep defect states in narrow-gap semiconductors [4355-29]
Growth and some properties of tellurium compound whiskers [4355-41]
Electron-positron annihilation in the narrow-gap semiconductor Hg~1~-~xCd~xTe [4355-25]
Photoluminescence in complex microporous-macroporous silicon structures [4355-21]
Hybrid and monolithic infrared detector arrays [4355-03]
MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge [4355-42]
Influence of light hole band nonparabolicity on CdHgTe transport properties [4355-20]