Five years of quantum cascade lasers: progress and challenges (Invited Paper) [3628-27]
Comparison of mid-infrared laser diode active regions [3628-35]
Three years of InGaN quantum-well lasers: commercialization already (Invited Paper) [3628-19]
Optically pumped InAs/InGaSb type-II quantum-well lasers [3628-34]
Superlattice quantum cascade lasers (Invited Paper) [3628-28]
High-optical-intensity 2D AlGaAs laser arrays [3628-10]
Aluminum-free active-area laser bars at 790- to 830-nm wavelengths (Invited Paper) [3628-02]
High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy [3628-25]
Issues in mid-IR type-II interband cascade lasers [3628-30]
High-power InAlGaAs laser diodes with high efficiency at 980 nm [3628-36]
Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion [3628-16]
Integration of red, infrared, and blue light sources by wafer fusion [3628-26]