1–4 von 4 Ergebnissen
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    Theoretical and Experimental Analysis on InAlGaAs/AlGaAs Active Region of 850-nm Vertical-Cavity Surface-Emitting Lasers

    Chang, Y.-A. / Chen, J.-R. / Kuo, H.-C. et al. | British Library Online Contents | 2006

    Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector

    Chen, C.-C. / Chen, J.-R. / Yang, Y.-C. et al. | British Library Online Contents | 2010

    Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs

    Chen, J.-R. / Ko, T.-S. / Lu, T.-C. et al. | British Library Online Contents | 2008

    Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

    Chen, J.-R. / Lee, C.-H. / Ko, T.-S. et al. | British Library Online Contents | 2008

      Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

      Chen, J.-R. / Lee, C.-H. / Ko, T.-S. et al. | British Library Online Contents | 2008

      Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

      Chen, J.-R. / Lee, C.-H. / Ko, T.-S. et al. | British Library Online Contents | 2008