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Infrarotdetektor
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keywords:("Infrarotdetektor")
HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching [4795-25]
Dislocations in HgCdTe (111)B films [4795-14]
Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates [4795-02]
Porous silicon photoemission for possible electronic and accessory applications [4795-28]
Intermixing effect on asymmetric quantum well [4795-06]
Influence of photoresist feature geometry on ECR plasma-etched HgCdTe frenches [4795-23]
Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]
n and k measurement of MCT and PST by polarized reflectometry [2274-13]
Monte Carlo simulations of the crosstalk in InSb matrices [2274-26]
Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes [2274-09]
Elaboration of new uncooled detector materials highly sensitive in the near-IR region [5209-24]
Influences of performance parameters of GaAs/AlGaAs materials on photoemission [5209-20]
Superlattices for very long wavelength infrared detectors [5209-08]
Development and evaluation of a novel large-area single-pixel QWIP for infrared radiometry [5209-22]