Very long wavelength (> 15 mum) HgCdTe photodiodes by liquid phase epitaxy (Invited Paper) [5564-09]
Phase transition in ferroelectric hemicyanine Langmuir-Blodgett multilayers [5564-17]
Optimizing indium aluminum antimonide LEDs and photodiodes for gas sensing applications [5564-15]
Fundamental physics and practical realization of mid-infrared photodetectors [5564-14]
MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates [5564-26]
Large-format IRFPA development on silicon (Invited Paper) [5564-05]
Uncooled InAs photodiodes for optoelectronic sensors [5564-16]
High-speed CMOS-compatible photodetectors for optical interconnects [5564-22]
Photoelectric properties of crystalline silicon: theory and application [5564-25]
The HgCdTe electron avalanche photodiode (Invited Paper) [5564-21]
Design and development of multicolor detector arrays [5564-04]