Electric permittivity and remanent polarization in polycrystalline Ba(Ti~1~-~xSn~x)O~3 [3179-37]
X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystals [3179-33]
Optical and electrical tests of uniformity of rf PCVD carbon coatings [3179-15]
Space-charge-perturbed currents due to continuous carrier injection [3179-52]
Nanotribological investigations of NCD coatings covering metal slitting saws [3179-16]
Growth-physics of silicon-based heterostructures in MBE processes (Invited Paper) [3179-02]
Optical properties of Zn~xMg~1~-~xSe/GaAs heterojunctions grown by MBE [3179-26]
Effect of optical phonon confinement on Raman spectra of porous silicon [3179-06]
Determination of recombination cross section for free electron in n-CuInS~2 [3179-53]
Influence of gamma radiation on performance of Nd^3^+-doped SrLaGa~3O~7? lasers [3179-48]
Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]
Preparation, morphology, and electrical properties of TiN~1~-~xC~x thin layers [3179-17]
Activated lithium tetraborate and calcium sulphate in radiation dosimetry [3179-46]
Time-resolved spectroscopy of low-dimensional structures based on porous silicon [3179-07]
Lithium niobate as the substratum for the SAW acceleration sensor [3179-45]
InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]