1–9 von 9 Ergebnissen
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    Selective growth of II-VI materials on Si(211): First-principle calculations

    Huang, Y. / Chen, X. S. / Duan, H. et al. | IEEE | 2006

    Properties of MBE Growth InN: Cr Films

    Chen, P. P. / Lu, W. / Makino, H. et al. | IEEE | 2006

    Optical properties of InN films grown by MBE at different conditions

    Chen, P.P. / Makino, H. / Wang, J.B. et al. | IEEE | 2004

    New Shallow Donors in High-purity Si

    Yu, C. H. / Zhang, B. / Li, Y. J. et al. | IEEE | 2006

    Modeling of Two-color HgCdTe Detectors

    Xu, X. Y. / Ye, Zh. H. / Lu, W. et al. | IEEE | 2006

    Measurement of Minority Carrier Lifetime in Hg1-xCdxTe Photodetector

    Cui, H. Y. / Li, Z. F. / Xu, X. Y. et al. | IEEE | 2006

    Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaNxAs1-x/GaAs

    Liu, Z. L. / Chen, P. P. / Wang, C. et al. | IEEE | 2006