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A 77GHz automotive radar MMIC chip set fabricated by a 0.15 mu m MHEMT technology
Nano-satellites, a fast way to pre-qualify new micro-technology
FDTD modeling of an InP traveling-wave HPT [5451-70]
Third-order nonlinearities of sulfur and selenide glasses at telecommunication wavelengths [5451-52]
Photoluminescence and waveguiding in sputtered films of Er-doped chalcogenide glasses [5451-50]
Fabrication and characterization of single-mode integrated polymer waveguide components [5451-05]
Dynamic whispering gallery mode behavior in microdisks [5451-31]
Optical characterization of 1-GHz silicon-based optical modulator [5451-91]
Investigation of organic materials by generalized m-line spectroscopy method [5451-79]
Theoretical study of double microcavity resonator system with absorption or gain [5451-75]
Sensitizing effects in Ag-Er codoped glasses for optical amplification (Invited Paper) [5451-49]
Polarization-independent optical ring resonators on silicon on insulator [5451-42]
Advanced modeling and design of ion-exchanged glass waveguides and devices [5451-58]
A grating-based coupler for fiber-to-silicon waveguide excitation [5451-56]
An integrated Si-based electro-optical modulator [5451-35]
Hybrid 1x2 WDM components based on polymer mountings [5451-08]
UV-laser-based process for quantum well intermixing of III-V heterostructures [5451-86]
Optical and structural properties of sputtered waveguiding zinc oxide thin films [5451-39]
Modeling of bias errors in fiber optic gyroscopes with new simulation tool [5451-18]
High-quality waveguides by reverse proton exchange in stoichiometric lithium tantalate [5451-13]
Optical spectroscopy of Er^3^+ and Ce^3^+-codoped TeO~2-WO~3-Na~2O glasses [5451-51]
Mode beating in tapered high-power lasers [5451-36]
A 38-THz-Omega OEIC for DVD applications [5451-04]
An ultrafast optical modulator based on SiGe HBT [5451-83]
A fast high-resolution CMOS imager for nanosecond light pulse detections [5451-69]
Analytical study of whispering gallery mode in 2D microgear cavity [5451-43]
Raman emission in porous silicon at 1.54 mum [5451-94]
Dysprosium-doped chalcogenide films prepared by pulsed laser deposition [5451-85]
Tolerance of polarization-independent waveguides for communication devices [5451-55]