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128x128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range [4340-06]
Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics [4340-34]
Methods of determining the deep defect concentration [4340-31]
Rising perspectives of the threshold characteristics of night vision devices [4340-19]
Source of intense beam of ions with low energy [4340-48]
Material aspects of OEIC development based on A^2B^6 compounds on silicone and sapphire [4340-36]
Adequacy of modeling the environment in the interest of developing night vision devices [4340-22]
Development of 65x1 uncooled membrane-type microbolometer array [4340-08]
MCT heterostructure design and growth by MBE for IR devices [4340-33]
LWIR heterodyne HgCdTe detectors [4340-10]
IR detector performance in an area array [4340-05]
Mathematical modeling of thermal modes of multilayer photodetector structures [4340-47]
Analysis of ultimate abilities of ideal thermal imagers at observation of point emitters [4340-41]
IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells [4340-02]