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Infrarotdetektor
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keywords:("Infrarotdetektor")
Infrared detectors for 2- to 220-m astronomy (Invited Paper) [2274-28]
Selectively plated infrared-sensitive lead sulfide layers [2274-21]
Effect of the OH ions on SiO~2/SPG/SiO~2/InSb device stability [2274-30]
Optical refractive and reflective properties of Hg~1~-~xCd~xTe [2274-15]
Impulse coupling between laser and HgCdTe [2274-11]
Low-cost uncooled ferroelectric detector [2274-27]
Study of heat-flow equation for uncooled infrared focal plane arrays [4795-34]
Electrochemical CdTe deposition for HgCdTe surface passivation [4795-20]
Porous silicon photoemission for possible electronic and accessory applications [4795-28]
Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy [4795-03]
Materials for infrared detectors II : 8 - 9 July 2002, Seattle, Washington, USA
Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates [4795-02]
Progress in far-infrared detection technology [4795-21]
Progress in MBE growth of HgCdTe at SITP [4795-05]